文档网

DN3545N3-G中文资料

DN3545N3-G中文资料

元器件交易网http://www.wendangwang.com

N-Channel Depletion-Mode

DN3545N3-G中文资料

Vertical DMOS FET

DN3545N3-G中文资料

DN3545N3-G中文资料

Features

High input impedanceLow input capacitanceFast switching speedsLow on resistance

Free from secondary breakdownLow input and output leakage

General Description

These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coef cient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

DN3545N3-G中文资料

Applications

Normally-on switchesSolid state relaysConvertersLinear ampli ers

Constant current sourcesPower supply circuitsTelecom

Package Options

SGD

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

DN3545N3-G中文资料

*Distance of 1.6mm from case for 10 seconds.

TO-92

DN3545N3-G中文资料

(front view)

TO-243AA

(top view)

-G indicates package is RoHS compliant (‘Green’)

相关文档
热门文档
你可能喜欢
  • 常用稳压管型号
  • lm358中文资料
  • 24c02中文资料
  • ds18b20中文资料
  • ds1302中文资料
评论