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N-Channel Depletion-Mode

Vertical DMOS FET

Features

High input impedanceLow input capacitanceFast switching speedsLow on resistance

Free from secondary breakdownLow input and output leakage

General Description

These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coef cient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Applications

Normally-on switchesSolid state relaysConvertersLinear ampli ers

Constant current sourcesPower supply circuitsTelecom

Package Options

SGD

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

*Distance of 1.6mm from case for 10 seconds.

TO-92

(front view)

TO-243AA

(top view)

-G indicates package is RoHS compliant (‘Green’)